Demonstration of Symmetric Lateral NPN Transistors on SOI Featuring Epitaxially Grown Emitter/Collector Regions
نویسندگان
چکیده
منابع مشابه
Epitaxially grown GaAsN random laser
We have studied the photoluminescence properties of as-grown GaAs12xNx epitaxial layers grown on GaAs containing 0.6%, 1.77%, and 2.8% nitrogen. We found laser emission from thick (d .200 nm! GaAs0.972N0.028 layers exhibiting the characteristic lasing properties of random lasers. This is unusual because random lasers have so far only been associated with highly disordered or random media. We be...
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ژورنال
عنوان ژورنال: IEEE Journal of the Electron Devices Society
سال: 2018
ISSN: 2168-6734
DOI: 10.1109/jeds.2017.2776902